CMT-1000H High - Temp Hall Effect Measurement System

The CMT-1000H High-Temp Hall Effect Measurement System is designed for high-temperature semiconductor and material research. It integrates high-precision electromagnets, constant current sources, gauss meters, temperature controllers, and intelligent software to deliver accurate Hall effect and resistivity measurements.

The system supports automated measurement of Hall voltage, resistivity, mobility, and carrier concentration under variable temperature and magnetic field conditions. With its high-temperature vacuum chamber and automated data processing, it provides a reliable platform for advanced materials research.

• Fully automated Hall effect measurement with one-click data processing
• High-temperature measurement capability: up to 773 K (optional)
• Constant current source and precision voltage measurement for Hall testing
• Compatible with a wide range of semiconductor and conductive materials
• Real-time I-V, I-R, and Hall parameter curve plotting
• Four-quadrant constant current power supply with smooth zero-crossing switching
• Uniform magnetic field design for long-term stability
• Integrated gauss meter and data acquisition for precise control and analysis

• Semiconductor materials: SiGe, SiC, InAs, InGaAs, InP, AlGaAs, HgCdTe, ferrite materials
• Low-impedance materials: graphene, metals, transparent oxides, weakly magnetic semiconductors, TMR materials
• High-resistance materials: semi-insulating GaAs, GaN, CdTe

• Automated Hall effect and resistivity calculations
• Real-time curve plotting: I-V, I-R, R-T, and Hall coefficient trends
• Continuous measurement at fixed temperature intervals
• Data communication with gauss meter, power supply, and temperature controller
• Exportable data for analysis and reporting

• Pole diameter: 100 mm
• Max magnetic field: 20,000 Gs (10 mm spacing) 13,000 Gs (20 mm spacing) 10,000 Gs (30 mm spacing)
• Uniformity: ±1% (10 mm diameter at 60 mm spacing)
• Weight: 110 kg (including bracket and wheels)

• Output: ±10 A / ±80 V, 800 W
• Smooth zero-crossing and reversal without switching
• Four-quadrant operation (suitable for inductive loads)
• Current change rate: 0.0007 – 0.3 F.S./s
• Stability: ±25 ppm/h (standard), ±5 ppm/h (high stability)
• Accuracy: ±(0.01% set value + 1 mA)
• Resolution: 20-bit (e.g., 0.03 mA at 15 A)
• Ripple (RMS): <1 mA

• Accuracy: ±0.30% of reading
• Range: 0–3 T, resolution 0.01 mT
• Probe: 1.0 mm thickness, 100 mm length
• RS-232 interface, supplied with GP3 probe
• Adjustable non-magnetic aluminum probe holder (5–70 mm)
• Customizable sample holder fixtures

• Vacuum chamber: 293 K – 470 K
• TESK301 controller (65 K – 600 K)
• K25 vacuum pump

• Current range: ±50 nA – ±50 mA, resolution 0.1 nA
• Voltage range: 0.1 μV – 30 V, accuracy 0.01%
• Built-in test matrix conversion card
• Ohmic contact kits (customizable per material)