CMT-1000L Low - Temp Hall Effect Test System

The CMT-1000L Low-Temp Hall Effect Test System is designed for precise measurement of semiconductor electrical properties under low-temperature conditions. It measures critical parameters such as carrier concentration, mobility, resistivity, and Hall coefficient, providing essential insights into semiconductor behavior.

With automated data acquisition and analysis, the system simplifies complex procedures and ensures reliable results. It is an indispensable platform for researchers studying semiconductor devices and material transport properties.

• Automated calculation of carrier concentration, mobility, resistivity, Hall coefficient, and magnetoresistance
• Integrated CMT-320 Effector combining constant current source, high-resolution microvoltmeter, and switching relay for efficient Hall measurements
• Wide measurement ranges for resistivity, resistance, and carrier concentration
• Cryostat-based temperature control for low-temperature applications
• Fully automated measurement with one-button operation
• Data visualization and export capability for post-processing in EXCEL

• Semiconductor materials: SiGe, SiC, InAs, InGaAs, InP, AlGaAs, HgCdTe, ferrite materials
• Low-impedance materials: graphene, metals, transparent oxides, weakly magnetic semiconductors, TMR materials
• High-resistance materials: semi-insulating GaAs, GaN, CdTe

• One-button automated measurement process
• Control of sample current, magnetic field strength, and temperature environment
• Rapid temperature stabilization (≈1 minute) before measurements
• Real-time calculation of Hall parameters and resistivity
• Curve plotting and EXCEL export for further analysis

• Pole diameter: 100 mm
• Max magnetic field: 20,000 Gs at 10 mm air gap 13,000 Gs at 20 mm air gap 10,000 Gs at 30 mm air gap
• Uniform area: 10 mm diameter at 60 mm spacing, ±1% uniformity
• Weight: 110 kg (including bracket and wheels)

• Output: ±10 A / ±80 V, 800 W
• Smooth zero-crossing without switching commutation
• Four-quadrant operation, suitable for inductive loads
• Current rate adjustment: 0.0007 – 0.3 F.S./s
• Stability: ±25 ppm/h (standard), ±5 ppm/h (high stability)
• Accuracy: ±(0.01% set value + 1 mA)
• Resolution: 20-bit (e.g., 0.03 mA at 15 A)
• Ripple (RMS): <1 mA

• Accuracy: ±0.30% of reading
• Range: 0 – 3 T, resolution: 0.01 mT
• Probe: 1.0 mm thickness, 100 mm length
• RS-232 interface with GP3 probe
• Adjustable non-magnetic aluminum probe holder (5–70 mm)

• Temperature range: 80 K – 293 K
• DX301 thermostat controller (65 K – 600 K)
• K25 vacuum pump

• Current range: ±50 nA – ±50 mA, resolution 0.1 nA
• Voltage measurement: 0.1 μV – 30 V, accuracy 0.01%
• Built-in test matrix conversion card
• Customizable ohmic contact kits for different materials