CMT-1000T Dual-Temperature Hall Effect Test System

Name: CMT-1000T Dual-Temperature Hall Effect Test System
Brand: Vectomag

CMT-1000T enables Hall effect testing across high and low temperatures, integrating magnet, Gauss meter, Dewar, and precise temperature control.

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1. Product Overview

The CMT-1000T Dual-Temperature Hall Effect Test System is a fully integrated platform for advanced semiconductor characterization. It combines high-precision electrical instruments, electromagnets, temperature control systems, and intelligent software to measure key parameters such as carrier concentration, mobility, resistivity, and Hall coefficient.

With automated data acquisition and curve plotting, the system simplifies complex experimental procedures and ensures accuracy, making it an indispensable tool for semiconductor research and material property evaluation.

2. Key Features

Integrated CMT-320 Effector: constant current source, 6½-digit microvoltmeter, and switching relay for Hall measurements
Capable of measuring carrier concentration, mobility, resistivity, and Hall coefficient
Automated calculation of experimental results, including: Bulk and sheet carrier concentration Hall mobility and Hall coefficient Resistivity and magnetoresistance
Wide testable material range: semiconductors, metals, oxides, graphene, and high-resistance compounds
I-V and I-R curve measurements under varying magnetic fields and temperatures
One-key fully automated testing with continuous measurement capabilities
Stable long-term magnetic field with uniformity control

3. Technical Specifications

Magnetic field: 2T (10 mm pole gap), 1T (30 mm pole gap)
Sample current: 0.05 μA – 50 mA, adjustable (0.1 nA resolution)
Measuring voltage: 0.1 μV – 30 V
Resistivity range: 1×10⁻⁷ – 1×10¹² Ω·cm
Resistance range: 10 mΩ – 6 MΩ
Carrier concentration: 10³ – 10²³ cm⁻³
Mobility: 0.1 – 1×10⁸ cm²/V·s
Temperature range: 77 K – 470 K, adjustment resolution 0.1 K
Minimum resolution: 0.1 GS
Automated measurement: Hall coefficient and carrier concentration vs. temperature curves
Curve outputs: I-V, I-R, R-T, and magnetoresistance

4. Testable Samples & Applications

Semiconductor materials: SiGe, SiC, InAs, InGaAs, InP, AlGaAs, HgCdTe, ferrite materials
Low-impedance materials: graphene, metals, transparent oxides, weakly magnetic semiconductors, TMR materials
High-resistance materials: semi-insulating GaAs, GaN, CdTe

6. Software Functions

Automated calculation of Hall parameters and resistivity
Real-time plotting of I-V, I-R, R-T, and R-H curves
Continuous measurement capability at fixed temperature or magnetic field conditions
Data export functions for further analysis and reporting

Main Components

High-precision electromagnet Pole diameter: 100 mm Max field: 20,000 Gs (10 mm gap), 13,000 Gs (20 mm gap), 10,000 Gs (30 mm gap) Uniform area: 10 mm diameter at 60 mm spacing, ±1% uniformity Weight: 210 kg (with bracket and wheels)
High-precision bipolar constant current power supply Output: ±10 A / ±80 V, 800 W Four-quadrant operation, suitable for inductive loads Zero-crossing without switching Stability: ±25 ppm/h (standard), ±5 ppm/h (high stability) Resolution: 20-bit (e.g., 0.03 mA at 15 A)
High-precision gauss meter Accuracy: ±0.30% of reading Range: 0–3 T, resolution: 0.01 mT Probe thickness: 1.0 mm, length: 100 mm RS-232 interface, GP3 probe included Non-magnetic aluminum probe holder, adjustable 5–70 mm
High and low temperature thermostat Range: 80 K – 470 K TESTIK301 controller (65 K – 600 K) K25 vacuum pump
Constant current source and test table Current range: ±50 nA – ±50 mA, resolution 0.1 nA Voltage range: 0.1 μV – 30 V, accuracy 0.01% Built-in test matrix conversion card Ohmic contact kit (customizable per material)